How to fabricate solar Cells from silicon wafer

Creation of Solar cells oriented for industry structure

In the PV business, the creation tie from quartz to solar cell generally includes 3 significant kinds of organizations zeroing in on all or just pieces of the worth chain:

1.) Production of solar cells from quartz, which are organizations that fundamentally control the entire worth chain.

2.) Fabrication of silicon wafers from quartz - organizations that ace the creation tie up to the cutting of silicon wafers and afterward offer these wafers to manufacturing plants with their own sunlight based cell creation hardware.

3.) Makers of solar cells from silicon wafers, which fundamentally alludes to the restricted amount of sun powered PV module producers with their own wafer-to-cell creation hardware to control the quality and cost of the solar cells.

With the end goal of this article, we will show the quality of solar cells fabricated from

silicon wafers.

Before making a silicon wafer, pure silicon is required which should be recuperated by decrease and sanitization of the polluted silicon dioxide in quartz.

In this initial step, squashed quartz is placed in an exceptionalfurnace, and afterward a carbon electrode is applied to create a high-temperature electric arc between the electrode and the silicon dioxide.

That interaction, called carbon arc welding (CAW), lessens the oxygen from the silicon dioxide and produces carbon dioxide at the electrode and  melt silicon.

This melt silicon is very nearly 100% (99%) pure which is as yet lacking to be utilized for handling into a solar cell, so further decontamination is embraced by applying the floating zone technique (FZT).

During the FZT, the close to 100% pure silicon is more than once passed in a similar bearing through a furnace tube. This interaction pushes the 1% unclean parts to one end, with the excess 100 percent unadulterated parts staying on the opposite side. The unclean part can then be effectively cut off.

Crystal seeds of silicon are in the step named Czochralski (CZ) process put into polycrystalline silicon dissolve of the Czochralski growth assembly. By separating the seeds from the melt with the puller, they turn and form a pure cylindrical silicon ingot cast out from the melt and which is utilized to make mono-crystalline silicon cells.

To make multi-crystalline silicon cells, different techniques exist:

1.) heat exchange technique (HET)

2.) electro-magneto casting (EMC)

3.) directional solidification framework (DSS)

DSS is the most widely recognized technique, initiated by hardware from equipment manufacturer GTadvanced. By this strategy, the silicon is gone through the DSS ingot growth furnace and handled into pure quadratic silicon blocks.

During the casting of the ingots, the silicon is in many cases currently pre-doped prior to cutting and selling the wafer circles to the producers. Doping is fundamentally the most common way of adding pollutions into the crystalline silicon wafer to make it electrically conductive.

These positive (p-type) and negative (n-type) doping materials are for the most part boron, which has 3 electrons (3-valent) and is utilized for p-type doping, and phosphorous, which has 5 electrons (5-valent) and is utilized for n-type doping. Silicon wafers are frequently pre-doped with boron.

When we have our ingots prepared, they can then - contingent upon the geometrical shape necessities, for solar cells normally powered space-saving hexagonal or rectangular shapes-be cut into typically 125mm or 156mm silicon wafers by utilizing a multiwire saw.

 

Handling of silicon wafers into solar cells

The standard interaction stream of creating solar cells from silicon wafers involves 9 stages from a first quality check of the silicon wafers to the last testing of the prepared solar cells.

Stage 1: Pre-check and Pretreatment

The crude silicon wafer circles initially go through a pre-check during which they are reviewed on their geometric shape and thickness conformity and on damages like cracks, breakages, scratches, or other anomalities.

Following this pre-check, the wafers are parted and cleaned with modern cleansers to eliminate any metal residues, liquids or other creation stays from the surface that would some way or another effect the proficiency of that wafer.

Step 2: Texturing

Following the underlying pre-check, the front surface of the silicon wafers is textured to decrease reflection losses of the incident light.

For monocrystalline silicon wafers, the most well-known method is rodom pyramid texturing which includes the inclusion of the surface with adjusted up-ward pointing pyramid structures.

This is accomplished by etching and pointing upwards from the front surface. The legitimate arrangement of the pyramids etched out is a consequence of the regular atomic structure of monocrystalline silicon.

The regular, organized atomic structure of monocrystalline silicon additionally helps the passing of electrons through the cell likewise with few boundaries electrons flow much better. Consequently, monocrystalline silicon has an electrochemical structural primary benefit offering more effectiveness over the grainy atomic structure of multi-crystalline silicon.

Presently, with such a pyramid structure set up, the incident light doesn't reflect back and loses the surrounding air but bounces back onto the surface.

Another, more uncommon texturing procedure is the inverted pyramid texturing. Rather than pointing upwards from the front surface, the pyramids are etched into the wafer's surface, comparably introducing reflection losses of the incident light trapped in the inverted pyramid holes.

 

The texturing of multi-crystallin silicon wafers requires photolithography - a strategy including the etching of a geometrical shape on a substrate by utilizing light - or mechanical cutting of the surface by laser or exceptional saws.

Step 3: Corrosive Cleaning

Subsequent to texturing, the wafers insert through acidic cleaning. In this step, any post-texturing particles remains are taken out from the surface.

Utilizing hydrogen fluoride (HF) vapor, oxidized silicon layers on the substrate can be carved (or etched) away from the wafer surface. The outcome is a wet surface that can be effectively dried.

By utilizing hydrogen chloride (HCl), metallic residues on a superficial level can be absorbed by the chloride and subsequently eliminated from the wafer.

Step 4: Diffusion

Diffusion is essentially the most common way of adding a dopant to the silicon wafer to make it all the more electrically conductive. There are essentially 2 techniques for diffusion: solid state diffusion and emitter diffusion.

While the previous strategy fundamentally includes the generally referenced uniform doping of the wafers with the p-type and n-type materials, the emitter diffusion alludes to the setting of a thin dopant material-containing coating on the wafer bypassing the wafers through a diffusion coating furnace.

Wafers that have proactively been pre-doped with p-type boron during the casting process are during the dissemination cycle given a negative (n-type) surface by diffusing them with a phosphorous source at a high temperature, making the positive-negative (p-n) junction.

However, why diffuse the wafers? This junction of electron deficiency in the p-type and high electron concentration in the n-type considers overabundance electrons from the n-type to pass to the p-type, a stream making an electron field at the junction.

Step 5: etching and Edge Isolation

During diffusion, the n-type phosphorous diffuses into the ideal wafer surface as well as around the edges of the wafer as well as on the rear, making an electrical path between the front and backside and in this manner additionally preventing electrical isolation between the two sides.

The target of the carving (etching)  and edge isolation process is to eliminate this electrical way (path) around the wafer edge by disk stacking the cells on top of one another and afterward exposing them to a plasma etching chamber utilizing tetrafluoromethane (CF4) to etch uncovered edges.

Step 6: Post-etching Washing

After the etching, molecule residues' possible remaining parts on the wafer and the wafer edges. Thusly the wafers need to go through a second washing to eliminate the remaining parts of the past etching process.

After this subsequent washing, the wafers can additionally be handled for the deposition of antireflective (AR) coating.

Step 7: antireflective coating

Notwithstanding surface texturing, AR coating is much of the time applied on a superficial level to additionally diminish reflection and and improve the absorption of into the cells.

This process is a lot of required as the reflection of uncovered silicon solar cells is more than 30%. For the thin AR coating, silicon nitride (Si3N4) or titanium oxide (TiO2) is utilized. The color of the solar cell can be changed by changing the thickness of the antireflection coating.

 

In the semiconductor business, there are fundamentally three strategies to deposit layers on wafers, which are:

1.) Atmospheric Pressure Chemical Vapor Deposition (APCVD), which is utilized exclusively for a couple of uses and requires high temperatures.

2.) Low-Pressure Chemical Vapor Deposition (LPCVD), which includes the deposition process to be acted in tube heaters and like the APCVD strategy requires high temperatures.

3.)Plasma Enhanced Chemical Vapor Deposition (PECVD), which is the most well-known strategy for the deposition of AR coating on the wafer.

 

In the PECVD process, the thin coating exists in a gaseous state and is through a chemical reaction process hardened onto the wafer.

Step 8: Contact Printing and Drying

As the subsequent step, metal inlines are imprinted on the wafer with the goal to make ohmic contacts. These metal inlines are imprinted on the back side of the wafer, which is called backside printing.

This is accomplished by printing the metal pastes with extraordinary screen printing gadgets that place these metal inlines onto the rear. Subsequent to printing, the wafer goes through a drying cycle.

When dry, this interaction is trailed by the printing of the front side contacts, then, at that point, the wafer is some other time dried.

All things considered, contacts have been rinted on the back and front sides, the screen-printed wafers are gone through a sintering furnace to solidify the dry metal pastes onto the wafers. Then, the wafers are cooled and can as of now be called solar cells.

Step 9: Testing and Cell Arranging

In this last cycle, the now prepared to-collect solar cells are tested under recreated sunlight conditions and afterward arranged and sorted by their efficiencies.

This is dealt with by a solar cells testing device that consequently tests and sorts the cells. The assembly line laborers then just have to pull out the cells from the particular productivity archive to which the machine arranged the cells.

The solar cell then essentially turns into another unrefined substance that is then utilized in the assembly of solar PV modules. Contingent upon the perfection of the creation cycle and the fundamental silicon wafer material quality, the ultimate result in type of a solar cell is then additionally reviewed into various solar cell quality grades.

 

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Niclas is Chief Technology Officer at Sinovoltaics Group.Sinovoltaics Group assists PV developers, EPCs, utilities, financiers and insurance companies worldwide with the execution of ZERO RISK SOLAR projects - implemented by our multinational team of solar PV-specialized quality engineers and auditors on-site in Asia.Niclas has been living and working in Asia for over 10 years, including Mainland China, Taiwan, India and Iran. He is solar PV quality specialist with extensive experience with manufacturers in Asia and has before worked on clean energy projects at UNIDO and Grameen Shakti.

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